kst3904 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com kst3904 rev. a2 1 november 2011 kst3904 npn epitaxial silicon transistor features ? general purpose transistor absolute maximum ratings t a = 25c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current 200 ma p c collector power dissipation 350 mw t stg storage temperature range -55 to 150 c symbol parameter test condition min. max. units bv cbo collector-base breakdown voltage i c =10 a, i e =0 60 v bv ceo * collector-emitter breakdown voltage i c =1ma, i b =0 40 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 6 v i cex collector cut-off current v ce =30v, v eb =3v 50 na h fe * dc current gain v ce =1v, i c =0.1ma v ce =1v, i c =1ma v ce =1v, i c =10ma v ce =1v, i c =50ma v ce =1v, i c =100ma 40 70 100 60 30 300 v ce (sat) * collector-emitter saturation voltage i c =10ma, i b =1ma i c =50ma, i b =5ma 0.2 0.3 v v v be (sat) * base-emitter saturation voltage i c =10ma, i b =1ma i c =50ma, i b =5ma 0.65 0.85 0.95 v v c ob output capacitance v cb =5v, i e =0, f=1mhz 4 pf f t current gain-bandwidth product v ce =20v, i c =10ma, f=100mhz 300 mhz nf noise figure i c =100 a, v ce =5v, r s =1k , f=10hz to 15.7khz 5db t on turn on time v cc =3v, v be =0.5v, i c =10ma, i b1 =1ma 70 ns t off turn off time v cc =3v, i c =10ma, i b1 =i b2 =1ma 250 ns 1. base 2. emitter 3. collector sot-23 1 2 3 1a marking
kst3904 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com kst3904 rev. a2 2 typical performance characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. output capacitance figure 4. current gain bandwidth product 0.1 1 10 100 0 40 80 120 160 200 240 v ce = 1v h fe , dc current gain i c [a], collector current 0.1 1 10 100 0.01 0.1 1 10 v ce (sat) v be (sat) i c = 10 i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 1 10 100 0.1 1 10 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage 0.1 1 10 100 10 100 1000 v ce = 20v f t [mhz], current gain bandwidth product i c [ma], collector current
kst3904 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com kst3904 rev. a2 3 physical dimensions 0.96~1.14 0.12 0.03~0.1 0 0.38 re f 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.02 3 0.20 mi n 0.40 0.03 sot-23 dimensions in millimeters
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